Optoelectronic Device

A semiconductor structure, comprising:

• a p-type active region comprising a p-type superlattice;
• an n-type active region comprising an n-type superlattice;
• and
• an i-type active region between the n-type active region and the p-type active region comprising an i-type superlattice;
• wherein:
• the semiconductor structure comprises epitaxially grown semiconductor layers comprised solely of superlattices grown along a growth direction;
• the p-type superlattice is comprised of a plurality of p-type unit cells;
• the n-type superlattice is comprised of a plurality of n-type unit cells;
• the i-type superlattice is comprised of a plurality of i-type unit cells;
• an average alloy content of the plurality of p-type, n-type and i-type unit cells is constant along the growth direction;
• the p-type unit cells comprise a first layer of GaN and a first layer of AlN;
• the n-type unit cells comprise a second layer of GaN and a second layer of AlN;
• the i-type unit cells comprise a third layer of GaN and a third layer of AlN;
• a combined thickness of the third layer of GaN and the third layer of AlN is thicker than a combined thickness of the first layer of GaN and the first layer of AlN;
• the combined thickness of the third layer of GaN and the third layer of AlN is thicker than a combined thickness of the second layer of GaN and the second layer of AlN;
• and
• the first, second and third layers of GaN and the first, second and third layers of AlN have thicknesses that are less than or equal to a critical layer thickness required to maintain elastic strain.