Solar cell having an emitter region with wide bandgap semiconductor material

A solar cell, comprising:

• a semiconductor substrate;
• a thin dielectric layer disposed on the semiconductor substrate;
• a first emitter region of a first conductivity type disposed on the thin dielectric layer, wherein the first emitter region comprises polycrystalline silicon;
• a first oxide layer disposed on the semiconductor substrate;
• and
• a second emitter region of a second conductivity type disposed on the first oxide layer, the second conductivity type opposite the first conductivity type, wherein the second emitter region comprises polycrystalline silicon and a portion of the second emitter region is partially disposed over the first emitter region.

A solar cell, comprising:

• a semiconductor substrate;
• a thin dielectric layer disposed on the semiconductor substrate;
• a first emitter region of a first conductivity type disposed on the thin dielectric layer, wherein the first emitter region comprises polycrystalline silicon;
• a layer of doping material disposed on the first polycrystalline emitter region;
• a first oxide layer disposed on the semiconductor substrate;
• and
• a second emitter region of a second conductivity type disposed on the first oxide layer, the second conductivity type opposite the first conductivity type, wherein the second emitter region comprises polycrystalline silicon and a portion of the second emitter region is partially disposed over the first emitter region.