A method for manufacturing a light absorption layer having an intermediate-band, wherein quantum dots are dispersed in a matrix of a bulk semiconductor, which method comprises the following step 1, step 2, and step 3:
- (step 1) a step of ligand-exchanging the organic ligand of an organic ligand-containing quantum dot to a halogen element-containing substance to obtain a quantum dot solid containing the halogen element-containing substance as a ligand,
- (step 2) a step of obtaining a dispersion by mixing the quantum dot solid obtained in step 1 with a solution or mixed solution containing one or more substances selected from a bulk semiconductor and a precursor thereof,
- (step 3) a step of obtaining a light absorption layer from the dispersion obtained in step 2.