Composite and transistor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
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Abstract
A novel material is provided. A composite oxide semiconductor in which a first region and a plurality of second regions are mixed is provided. Note that the first region contains at least indium, an element M (the element M is one or more of Al, Ga, Y, and Sn), and zinc, and the plurality of second regions contain indium and zinc. Since the plurality of second regions have a higher concentration of indium than the first region, the plurality of second regions have a higher conductivity than the first region. An end portion of one of the plurality of second regions overlaps with an end portion of another one of the plurality of second regions. The plurality of second regions are three-dimensionally surrounded with the first region.
Claims30
A transistor comprising:
- a gate electrode;
- a gate insulating film;
- and
- an oxide semiconductor,
- wherein the oxide semiconductor comprises a first region and a second region,
- wherein the first region comprises indium (In), an element M, and zinc (Zn),
- wherein the element M is one or more of aluminum, gallium, yttrium, and tin,
- wherein the second region comprises indium and zinc,
- wherein a concentration of indium in the second region is higher than a concentration of indium in the first region, and
- wherein the first region and the second region are mixed.
A transistor comprising:
- a gate electrode;
- a gate insulating film;
- and
- an oxide semiconductor,
- wherein the oxide semiconductor comprises a first region and a second region,
- wherein the first region comprises indium (In), an element M, and zinc (Zn),
- wherein the element M is one or more of aluminum, gallium, yttrium, and tin,
- wherein the second region comprises indium and zinc,
- wherein a concentration of indium in the second region is higher than a concentration of indium in the first region, and
- wherein the second region comprises nanocrystals.
A transistor comprising:
- a gate electrode;
- a gate insulating film;
- and
- an oxide semiconductor,
- wherein the oxide semiconductor comprises a first region and a second region,
- wherein the first region comprises indium (In), an element M, and zinc (Zn),
- wherein the element M is one or more of aluminum, gallium, yttrium, and tin,
- wherein the second region comprises indium and zinc,
- wherein a concentration of indium in the second region is 1.1 to 10 times as high as a concentration of indium in the first region, and
- wherein the first region and the second region are mixed.
A transistor comprising:
- a gate electrode;
- a gate insulating film;
- and
- an oxide semiconductor,
- wherein the oxide semiconductor comprises a first region and a second region,
- wherein the first region comprises indium (In), an element M, and zinc (Zn),
- wherein the element M is one or more of aluminum, gallium, yttrium, and tin,
- wherein the second region comprises indium and zinc,
- wherein a concentration of indium in the second region is 1.1 to 10 times as high as a concentration of indium in the first region, and
- wherein the second region comprises nanocrystals.
Dependencies are inferred from the claim text.