Dopant Concentration Boost in Epitaxially Formed Material

A device comprising:

• a first transistor and a second transistor, the first and second transistors configured to operate in a complimentary manor;
• a first source/drain region of the first transistor, the first source/drain region comprising:
• a first semiconductor material, and
• a first dopant in the first semiconductor material, the first dopant having alternating gradients of concentration in the first source/drain region, the first dopant comprising an n-type dopant;
• and
• a second source/drain region of the second transistor, the second source/drain region comprising:
• a second semiconductor material different than the first semiconductor material, and
• a second dopant in the second semiconductor material, the second dopant having alternating gradients of concentration in the second source/drain region, the second dopant comprising a p-type dopant.

A device comprising:

• a first source/drain region embedded in a substrate, the first source/drain region comprising:
• a first semiconductor material,
• a first dopant, and
• a first plurality of boosting layers disposed in the first semiconductor material, each of the first plurality of boosting layers comprising a material different than the first semiconductor material, wherein a concentration of the first dopant has a peak at each of the first plurality of boosting layers;
• a second source/drain region embedded in the substrate;
• and
• a first gate stack disposed over a first channel region of the substrate, the first gate stack interposed between the first source/drain region and the second source/drain region.