Semiconductor device

A semiconductor device, comprising:

• a first semiconductor layer of a first conductivity type;
• a first element including a second semiconductor layer of a second conductivity type, at least a portion of the first element being formed in an upper layer portion of the first semiconductor layer;
• a second element including a third semiconductor layer of the second conductivity type, at least a portion of the second element being formed in an upper layer portion of the first semiconductor layer;
• a first conductive member disposed in the first semiconductor layer between the first element and the second element, an upper end of the first conductive member being positioned higher than an upper end of the second semiconductor layer, a lower end of the first conductive member being positioned lower than a lower end of the second semiconductor layer and a lower end of the third semiconductor layer;
• and
• a first semiconductor region provided inside the first semiconductor layer, the first semiconductor region being of the second conductivity type and contacting the first conductive member.