Semiconductor device

A semiconductor device comprising:

• a plurality of first column-shaped members including a plurality of first conductive layers, the first conductive layers each extending in a depth direction of a semiconductor substrate, the plurality of first column-shaped members being arranged to have an equal pitch to adjacent three of the first column-shaped members;
• first gates disposed along, and at a constant distance from, outer peripheral edges of the plurality of first column-shaped members;
• a base layer provided between the plurality of first column-shaped members and the first gates;
• source layers in electrical conduction with the plurality of first conductive layers, and connected to the base layer;
• a plurality of second gates extending in a first direction from the first gates and provided at an equal pitch;
• and
• a plurality of second column-shaped members arranged in a stripe pattern, extending in the depth direction of the semiconductor substrate, provided at an equal pitch, and having the plurality of second conductive layers, the second column-shaped members being provided alternately with the plurality of second gates.

The semiconductor includes:

• a first electrode provided in an element region and terminal region surrounding the element region;
• a second electrode provided in an element region and terminal region surrounding the element region;
• a first semiconductor layer of a first conductive type, the first semiconductor layer being provided between the first electrode and the second electrode;
• a first semiconductor region of a second conductive type, the first semiconductor region being provided between the first electrode and the first semiconductor layer;
• a second semiconductor region of the second conductive type, the second semiconductor region being provided between the first electrode and the first semiconductor region,
• a first electrode member being positioned in the element region,
• a second electrode member being positioned in the terminal region, the second electrode member being connected electrically to the first electrode member;
• a plurality of third electrodes provided among the first semiconductor layer, the first semiconductor region, the second semiconductor region, and the first electrode via a first insulation film;
• and
• a forth electrode provided between the second electrode member, the forth electrode being provided between the first semiconductor layer and the first semiconductor region via a second insulation film.