Semiconductor device

A semiconductor device comprising:

• a silicon carbide layer having a first plane and a second plane opposite to the first plane;
• a first trench provided in the silicon carbide layer and extending in a first direction;
• a second trench provided in the silicon carbide layer and extending in the first direction;
• a first gate electrode provided in the first trench;
• a second gate electrode provided in the second trench;
• a first gate insulating layer provided between the first gate electrode and the silicon carbide layer;
• a second gate insulating layer provided between the second gate electrode and the silicon carbide layer;
• a first silicon carbide region of a first conductivity type provided in the silicon carbide layer;
• a plurality of second silicon carbide regions of a second conductivity type provided in the silicon carbide layer, the second silicon carbide regions located between the first silicon carbide region and the first plane, the second silicon carbide regions located between the first trench and the second trench, and the second silicon carbide regions separated from each other in the first direction;
• a third silicon carbide region of the first conductivity type provided in the silicon carbide layer and the third silicon carbide region located between one of the second silicon carbide regions and the first plane;
• a fourth silicon carbide region of the second conductivity type provided in the silicon carbide layer, the fourth silicon carbide region located between two of the second silicon carbide regions, the fourth silicon carbide region located between the first trench and the first silicon carbide region, and the fourth silicon carbide region being in contact with the two of the second silicon carbide regions;
• a fifth silicon carbide region of the second conductivity type provided in the silicon carbide layer, the fifth silicon carbide region located between the two of the second silicon carbide regions, the fifth silicon carbide region located between the second trench and the first silicon carbide region, and the fifth silicon carbide region being in contact with the two of the second silicon carbide regions;
• a first electrode provided on a side of the first plane of the silicon carbide layer, the first electrode being in contact with the third silicon carbide region, and the first electrode being in contact with the first silicon carbide region between the two of the second silicon carbide regions;
• and
• a second electrode provided on a side of the second plane of the silicon carbide layer.