Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a first semiconductor region provided on the first electrode, the first semiconductor region being of a first conductivity type and being electrically connected to the first electrode;
• a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type;
• a third semiconductor region provided selectively on the second semiconductor region, the third semiconductor region being of the first conductivity type;
• a conductive portion provided inside the first semiconductor region with a first insulating portion interposed;
• a gate electrode separated from the conductive portion in a first direction, the first direction being from the first electrode toward the first semiconductor region,
• the gate electrode including a first portion provided on the conductive portion with a second insulating portion interposed, a lower surface of the first portion being positioned higher than a lower end of an interface between the second semiconductor region and the third semiconductor region,
• the gate electrode including a second portion opposing, with a gate insulating portion interposed, the first semiconductor region, the second semiconductor region, and the third semiconductor region in a second direction perpendicular to the first direction,
• a position in the second direction of the second portion being between a position in the second direction of the first portion and a position in the second direction of the second semiconductor region;
• and
• a second electrode provided on the second semiconductor region and the third semiconductor region and electrically connected to the conductive portion, the second semiconductor region, and the third semiconductor region.