Semiconductor device

A semiconductor device comprising:

• a first nitride semiconductor layer;
• a second nitride semiconductor layer on the first nitride semiconductor layer and having a larger band gap than the first nitride semiconductor layer;
• a first electrode above the first nitride semiconductor layer and electrically connected to the first nitride semiconductor layer;
• a second electrode above the first nitride semiconductor layer and electrically connected to the first nitride semiconductor layer;
• a gate electrode between the first electrode and the second electrode;
• a first field plate electrode connected to the first electrode;
• a second field plate electrode between the gate electrode and the second electrode, electrically connected to the first electrode, and having a multi-step configuration;
• a first conductive layer on the gate electrode;
• and
• a second conductive layer on the first conductive layer,
• wherein a first distance between the gate electrode and the second field plate electrode in a lateral direction from the first electrode toward the second electrode is shorter than a second distance between the first conductive layer and the second field plate electrode in the lateral direction, and the first distance is equal to or shorter than a third distance between the second conductive layer and the second field plate electrode in the lateral direction.

A semiconductor device comprising:

• a first nitride semiconductor layer;
• a second nitride semiconductor layer on the first nitride semiconductor layer and having a larger band gap than the first nitride semiconductor layer;
• a first electrode above the first nitride semiconductor layer and electrically connected to the first nitride semiconductor layer;
• a second electrode above the first nitride semiconductor layer and electrically connected to the first nitride semiconductor layer;
• a gate electrode between the first electrode and the second electrode and at least partially in a trench in the second nitride semiconductor layer;
• a first field plate electrode connected to the first electrode;
• a second field plate electrode between the gate electrode and the second electrode, and electrically connected to the first electrode;
• a first conductive layer on the gate electrode;
• and
• a second conductive layer on the first conductive layer,
• wherein a first distance between the gate electrode and the second field plate electrode in a lateral direction from the first electrode toward the second electrode is shorter than a second distance between the first conductive layer and the second field plate electrode in the lateral direction, and the first distance is equal to or shorter than a third distance between the second conductive layer and the second field plate electrode in the lateral direction.