Semiconductor device

A semiconductor device, comprising:

• a semiconductor body including
• a first semiconductor layer of a first conductivity type,
• a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer being of a second conductivity type,
• a third semiconductor layer provided selectively on the second semiconductor layer, the third semiconductor layer being of the first conductivity type, and
• a fourth semiconductor layer provided selectively on the second semiconductor layer, the fourth semiconductor layer being of the second conductivity type and being arranged with the third semiconductor layer on the second semiconductor layer;
• a first control electrode provided inside the semiconductor body, the first control electrode opposing the second semiconductor layer with a first insulating film interposed, the first control electrode including a lower end positioned inside the first semiconductor layer;
• and
• a second control electrode provided inside the semiconductor body, the second control electrode opposing the second semiconductor layer with a second insulating film interposed, the second control electrode including a lower end positioned inside the first semiconductor layer,
• the first control electrode and the second control electrode being arranged alternately in a first direction crossing a stacking direction of the first semiconductor layer and the second semiconductor layer, a third insulating layer being provided between the first control electrode and the second control electrode, the third insulating layer having a first surface and a second surface opposite to the first surface, the first control electrode contacting the third insulating layer at the first surface, the second control electrode contacting the third insulating layer at the second surface.