Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode disposed at a position opposing the first electrode;
• and
• a semiconductor body provided between the first electrode and the second electrode, the semiconductor body including a first semiconductor layer of a first conductivity type,
• the semiconductor body further including a second semiconductor layer provided between the first semiconductor layer and the first electrode, the second semiconductor layer being of a second conductivity type,
• the first electrode being electrically connected to the second semiconductor layer and including an extension portion, the extension portion piercing the second semiconductor layer and extending in a first direction toward the second electrode,
• the extension portion including an end portion positioned inside the first semiconductor layer.

A semiconductor device, comprising:

• a first electrode;
• a second electrode disposed at a position opposing the first electrode;
• a semiconductor body provided between the first electrode and the second electrode, the semiconductor body including a first semiconductor layer of a first conductivity type;
• and
• a control electrode provided between the first electrode and the semiconductor body, electrically insulated from the semiconductor body with a first insulating film interposed, and electrically insulated from the first electrode with a second insulating film interposed,
• the semiconductor body further including a second semiconductor layer of a second conductivity type, a third semiconductor layer of the second conductivity type, and a sixth semiconductor layer of the first conductivity type, the second semiconductor layer being selectively provided between the first semiconductor layer and the first electrode, the third semiconductor layer being selectively provided inside the first semiconductor layer and disposed at a position separated from the second semiconductor layer, the sixth semiconductor layer being selectively provided between the second semiconductor layer and the first electrode,
• the first electrode being electrically connected to the second semiconductor layer and the sixth semiconductor layer,
• the control electrode being disposed, with the first insulating film interposed, at a position opposing the first semiconductor layer, a portion of the second semiconductor layer, and the sixth semiconductor layer,
• the second semiconductor layer being positioned between the third semiconductor layer and the first electrode,
• the first electrode including an extension portion piercing the second semiconductor layer, extending in a first direction toward the second electrode, and being connected to the third semiconductor layer,
• the sixth semiconductor layer not being provided at a vicinity of the extension portion.