US 2020/0091323 A1Published application

Semiconductor device

AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation

InventorsYoko Iwakaji, Tomoko Matsudai, Takeshi Suwa

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Abstract

A semiconductor device includes a semiconductor layer having a first plane and a second plane; an emitter electrode on a side of the first plane; at least one collector electrode on a side of the second plane; a first gate electrode on the side of the first plane; at least one second gate electrode on the side of the second plane; a drift region of a first conductivity-type in the semiconductor layer; a collector region of a second conductivity-type in the semiconductor layer; and a first conductivity-type region of the first conductivity-type provided between a part of the collector region and the second plane, wherein the semiconductor device has a first effective gate distance and a second effective gate distance different from the first effective gate distance.

Claims18

Dependent claims

A semiconductor device comprising:

a semiconductor layer having a first plane and a second plane, the second plane being opposed to the first plane;
an emitter electrode provided on a side of the first plane of the semiconductor layer;
at least one collector electrode provided on a side of the second plane of the semiconductor layer;
a first gate electrode provided on the side of the first plane of the semiconductor layer;
at least one second gate electrode provided on the side of the second plane of the semiconductor layer;
a drift region of a first conductivity-type provided in the semiconductor layer;
a collector region of a second conductivity-type provided in the semiconductor layer, the collector region provided between a part of the drift region and the second plane, a part of the collector region opposed to the at least one second gate electrode, and a part of the collector region being in contact with the at least one collector electrode;
and
a first conductivity-type region of the first conductivity-type provided in the semiconductor layer, the first conductivity-type region provided between a part of the collector region and the second plane, a part of the first conductivity-type region being opposed to the at least one second gate electrode, and a part of the first conductivity-type region being in contact with the at least one collector electrode, wherein
when a portion of contact between the at least one collector electrode and the collector region is defined as a contact face,
a point that exists in a line segment on the contact face connecting a first point positioned on the contact face and a closest second gate electrode among the at least one gate electrode and is most distant from the at least one second gate electrode is defined as a second point, and a distance between the second point and a second gate electrode closest to the second point among the at least one second gate electrode is defined as an effective gate distance,
the semiconductor device has a first effective gate distance and a second effective gate distance different from the first effective gate distance.

9 more elements

A semiconductor device comprising:

a semiconductor layer having a first plane and a second plane, the second plane being opposed to the first plane;
an emitter electrode provided on a side of the first plane of the semiconductor layer;
a first collector electrode provided on a side of the second plane of the semiconductor layer;
a second collector electrode provided on the side of the second plane of the semiconductor layer;
a first gate electrode provided on the side of the first plane of the semiconductor layer;
a second gate electrode provided on the side of the second plane of the semiconductor layer;
a drift region of a first conductivity-type provided in the semiconductor layer;
a first collector region of a second conductivity-type provided in the semiconductor layer, the first collector region provided between a part of the drift region and the second plane, a part of the first collector region opposed to the second gate electrode, and a part of the first collector region being in contact with the first collector electrode;
a first conductivity-type region of first conductivity-type provided in the semiconductor layer, the first conductivity-type region provided between a part of the first collector region and the second plane, a part of the first conductivity-type region being opposed to the second gate electrode, and a part of the first conductivity-type region being in contact with the first collector electrode;
and
a second collector region of the second conductivity-type provided in the semiconductor layer, the second collector region provided between a part of the drift region and the second plane, and a part of the second collector region being in contact with the second collector electrode, wherein
an entire portion of the second collector electrode in contact with the second plane is in contact with the second collector region.

9 more elements

A semiconductor device comprising:

a semiconductor layer having a first plane and a second plane, the second plane being opposed to the first plane;
an emitter electrode provided on a side of the first plane of the semiconductor layer;
at least one collector electrode provided on a side of the second plane of the semiconductor layer;
a first gate electrode provided on the side of the first plane of the semiconductor layer;
at least one second gate electrode provided on the side of the second plane of the semiconductor layer;
a drift region of a first conductivity-type provided in the semiconductor layer;
a collector region of a second conductivity-type provided in the semiconductor layer, the collector region provided between a part of the drift region and the second plane, a part of the collector region opposed to the at least one second gate electrode, and a part of the collector region being in contact with the at least one collector electrode;
and
a first conductivity-type region of the first conductivity-type provided in the semiconductor layer, the first conductivity-type region provided between a part of the collector region and the second plane, a part of the first conductivity-type region being opposed to the at least one second gate electrode, and a part of the first conductivity-type region being in contact with the at least one collector electrode, wherein
when a portion of contact between the at least one collector electrode and the collector region is defined as a contact face,
a point that exists in a line segment on the contact face connecting a first point positioned on the contact face and a closest second gate electrode among the at least one second gate electrode and is most distant from the at least one second gate electrode is defined as a second point, and a distance between the second point and an end of the one contact face closest to the second point is defined as an effective width,
the semiconductor device has a first effective width and a second effective width different from the first effective width.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/284,053Filed 25 Feb 2019
Priority: JP 2018-17543919 Sep 2018
Published: 19 Mar 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10D 12/441
Insulated-gate bipolar transistors [IGBT]: vertical IGBTs
H10D 12/032
Of igbts: of vertical IGBTs
H10D 62/127
Top-view geometrical layouts of the regions or the junctions: of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
H10D 62/133
Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions: emitter…