Method of fabricating semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorAryan AFZALIAN
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device includes forming a channel region in a semiconductor substrate. The channel region is made of a first material. The method also includes forming source and drain regions in the semiconductor substrate. The method further includes forming a recess between the channel region and the drain region. The method further includes forming a tunnel barrier layer in the recess. The tunnel barrier layer is made of a second material, and a bandgap of the second material is greater than a bandgap of the first material. The method further includes forming a gate stack on the channel region.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- forming a channel region in a semiconductor substrate, wherein the channel region is made of a first material;
- forming source and drain regions in the semiconductor substrate;
- forming a recess between the channel region and the drain region;
- forming a tunnel barrier layer in the recess, wherein the tunnel barrier layer is made of a second material, and a bandgap of the second material is greater than a bandgap of the first material;
- and
- forming a gate stack on the channel region.
A method of fabricating a semiconductor device, the method comprising:
- forming a dummy gate structure on a semiconductor substrate to define a channel region, wherein the channel region is made of a first group III-V material;
- forming a first spacer and a second spacer over opposite sidewalls of the dummy gate structure;
- forming a source region in the semiconductor substrate adjacent to the channel region;
- removing a portion of the second spacer to expose a portion of the channel region;
- forming a tunnel barrier layer over the exposed portion of the channel region;
- and
- forming a drain region on the tunnel barrier layer, wherein the tunnel barrier layer is made of a second group III-V material, and a bandgap of the second group III-V material is greater than a bandgap of the first group III-V material of the channel region.
A method of fabricating a semiconductor device, the method comprising:
- forming a source region in a semiconductor substrate;
- forming a channel region extending upward from the semiconductor substrate, wherein the channel region is intrinsic and the channel region is made of a first material;
- forming a tunnel barrier layer over the channel region, wherein the tunnel barrier layer is made of a second material, and a bandgap of the second material is greater than a bandgap of the first material of the channel region;
- forming a drain region on the tunnel barrier layer;
- and
- forming a gate stack around the channel region.
Dependencies are inferred from the claim text.