Semiconductor Device and Methods of Manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Sheng Wang, Chi-Cheng Hung, Chia-Ching Lee, Ching-Hwanq Su
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Abstract
A semiconductor device and method of manufacturing are provided. In an embodiment a first nucleation layer is formed within an opening for a gate-last process. The first nucleation layer is treated in order to remove undesired oxygen by exposing the first nucleation layer to a precursor that reacts with the oxygen to form a gas. A second nucleation layer is then formed, and a remainder of the opening is filled with a bulk conductive material.
Claims20
A method of forming a semiconductor device, the method comprising:
- depositing a first dielectric material in an opening over a substrate;
- depositing a first conductive material over the first dielectric material, the first conductive material comprising a first metal;
- depositing a second conductive material over the first conductive material, the second conductive material being different from the first conductive material;
- depositing a blocking material over the second conductive material;
- depositing a first nucleation layer over the blocking material;
- and
- depositing a second nucleation layer over the first nucleation layer, wherein the first nucleation layer has an oxygen concentration greater than zero but less than 0.1% atomic adjacent to a boundary between the first nucleation layer and the second nucleation layer.
A semiconductor device comprising:
- a semiconductor fin;
- a gate stack over and along sidewalls of the semiconductor fin, wherein the gate stack comprises:
- a high-k dielectric;
- a first nucleation layer over the high-k dielectric;
- and
- a second nucleation layer over the first nucleation layer, wherein an oxygen concentration at an interface between the first nucleation layer and the second nucleation layer is greater than zero but less than 0.1% atomic;
- and
- a first metal-comprising material over the second nucleation layer, wherein the first metal-comprising material extends continuously from a first sidewall of the second nucleation layer to a second sidewall of the second nucleation layer, the second sidewall of the second nucleation layer faces the first sidewall of the second nucleation layer.
A transistor comprising:
- a first source/drain region;
- a second source/drain region;
- and
- a gate between the first source/drain region and the second source/drain region, the gate comprising:
- a gate dielectric;
- a first work function metal layer over the gate dielectric;
- a second work function metal layer over the first work function metal layer;
- a barrier layer over the second work function metal layer;
- a first tungsten-comprising layer over the barrier layer;
- a second tungsten-comprising layer over the first tungsten-comprising layer, an oxygen concentration at an interface between the first tungsten-comprising layer and the second tungsten-comprising layer is greater than zero but less than 0.1% atomic;
- and
- a metal layer over the second tungsten-comprising layer, wherein the metal layer is free of gaps filled with vacuum or air.
Dependencies are inferred from the claim text.