Epitaxial Features Confined by Dielectric Fins and Spacers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Ching, Kuan-Lun Cheng, Chih-Hao Wang
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Abstract
A method includes receiving a substrate; forming on the substrate a semiconductor fin; an isolation structure surrounding the semiconductor fin; and first and second dielectric fins above the isolation structure and sandwiching the semiconductor fin; depositing a spacer feature filling spaces between the semiconductor fin and the first and second dielectric fins; performing an etching process to recess the semiconductor fin, resulting in a trench between portions of the spacer feature; and epitaxially growing a semiconductor material in the trench.
Claims20
A device comprising:
- a first semiconductor fin disposed on a semiconductor substrate;
- a dielectric isolation structure disposed on the semiconductor substrate, the first semiconductor fin extending through the dielectric isolation structure;
- a first semiconductor feature disposed on and interfacing with the first semiconductor fin;
- a dielectric fin extending through the dielectric isolation structure, wherein a portion of the dielectric isolation structure is disposed between the dielectric fin and the semiconductor substrate thereby preventing the dielectric fin from interfacing with the semiconductor substrate;
- and
- a first spacer disposed along a first side of the dielectric fin and a second spacer disposed along a second side of the dielectric fin, the second side opposing the first side.
A device comprising:
- a first semiconductor fin disposed on a substrate and extending to a first height over the substrate;
- an isolation structure disposed on the substrate, the first semiconductor fin extending through the isolation structure;
- a first source/drain feature disposed directly on the first semiconductor fin, the first source/drain feature having a top portion having a first width, a middle portion having a second width and a lower portion having a third width, the first width being greater than the second width;
- a dielectric fin extending through the isolation structure, wherein the dielectric fin extends to a second height over the substrate that is greater than the first height;
- and
- a first spacer disposed along and physically contacting a first side of the first source/drain feature and a second spacer disposed along and physically contacting a second side of the first source/drain feature, the second side being opposite the first side.
A device comprising:
- a semiconductor fin disposed on a substrate;
- an epitaxial feature disposed over the semiconductor fin;
- an isolation structure disposed over the substrate, the semiconductor fin extending through the isolation structure;
- a first dielectric fin extending through the isolation structure;
- a gate stack disposed over the semiconductor fin and the first dielectric fin;
- and
- a contact disposed over the first dielectric fin, wherein the first dielectric fin extends to the contact.
The device of claim of 16, wherein the first dielectric fin has a first side and an opposing second side, and
- wherein the contact extends around and physically contacts the first side and the second side of the first dielectric fin.
Dependencies are inferred from the claim text.