FinFET with Dummy Fins and Methods of Making the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hao Hsu, Yu-Chun Ko, Yu-Chang Liang, Kao-Ting Lai
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Abstract
A semiconductor structure includes semiconductor fins protruding out of a substrate, dielectric fins protruding out of the substrate and disposed among the semiconductor fins, and gate stacks disposed over the semiconductor fins and the dielectric fins. The dielectric fins include a first dielectric material layer, a second dielectric material layer disposed over the first dielectric material layer, and a third dielectric material layer disposed over the second dielectric material layer, where the first and second dielectric material layers have different compositions and the first and the third dielectric material layers have the same compositions.
Claims20
A semiconductor structure comprising:
- semiconductor fins protruding out of a substrate;
- dielectric fins protruding out of the substrate and disposed among the semiconductor fins, the dielectric fins including a first dielectric material layer, a second dielectric material layer disposed over the first dielectric material layer, and a third dielectric material layer disposed over the second dielectric material layer, wherein the first and second dielectric material layers have different compositions, and wherein the first and the third dielectric material layers have the same compositions;
- and
- gate stacks disposed over the semiconductor fins and the dielectric fins.
A method of fabricating a semiconductor structure, comprising:
- forming a semiconductor fin structure over a substrate, wherein the semiconductor fin structure includes a plurality of semiconductor fins and defines trenches among the semiconductor fins;
- filling the trenches with a first dielectric material layer and a second dielectric material layer over the first dielectric material layer, the second dielectric material layer including a composition different from the first dielectric material layer, resulting in a dielectric fin structure having a plurality of dielectric fins;
- removing a portion of the second dielectric material layer to form a first recess;
- after the removing of the portion of the second dielectric material layer, removing portions of the semiconductor fins, resulting in a second recess formed in portions of the semiconductor fins;
- filling the first and the second recesses with a third dielectric material layer, the third dielectric material layer including a composition the same as the first dielectric material layer;
- and
- forming gate stacks over the semiconductor fins and the dielectric fins.
A semiconductor structure comprising:
- first fins disposed on a substrate and oriented lengthwise along a first direction, wherein the first fins include a semiconductor material;
- second fins disposed among the first fins and oriented lengthwise along the first direction, wherein the second fins include a first dielectric material layer;
- third fins disposed among the first fins and the second fins and oriented lengthwise along the first direction, wherein a first portion of each of the third fins includes the semiconductor material and a second portion of each of the third fins includes a second dielectric material layer having the same composition as the first dielectric material layer;
- and
- gate stacks disposed over the first, the second, and the third fins, the gate stacks being oriented lengthwise along a second direction orthogonal to the first direction.
Dependencies are inferred from the claim text.