Improper ferroelectric active and passive devices

A field effect transistor (FET) comprising:

• a substrate;
• a source and drain adjacent to the substrate;
• and
• a gate stack between the source and drain, wherein the gate stack includes:
• a dielectric;
• a first structure comprising improper ferroelectric material, wherein the first structure is adjacent to the dielectric;
• and
• a second structure comprising metal, wherein the second structure is adjacent to the first structure.

A system comprising:

• a memory;
• a processor coupled to the memory, the processor including a transistor which comprises:
• a substrate;
• a source and drain adjacent to the substrate;
• and
• a gate stack between the source and drain, wherein the gate stack includes:
• a dielectric;
• a first structure comprising improper ferroelectric material, wherein the first structure is adjacent to the dielectric;
• and
• a second structure comprising metal, wherein the second structure is adjacent to the first structure;
• and
• a wireless interface to allow the processor to communicate with another device.