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AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsMariko Yamashita, Tomoko Kinoshita, Keita Takahashi, Kanako Komatsu
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A semiconductor device includes a semiconductor portion of a first conductivity type, an insulating portion provided in an upper layer portion of the semiconductor portion, a source region, a drain region and a gate electrode. The insulating portion surrounds an active area. The source region and the drain region are provided inside the active area and separated from each other along a first direction parallel to an upper surface of the semiconductor portion. The source region and the drain region are of a second conductivity type. The gate electrode is provided above the semiconductor portion. The gate electrode is disposed in a region directly above a region between the source region and the drain region, and disposed in a region directly above an end portion in a second direction of the active area. The second direction is orthogonal to the first direction.
A semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.