Semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorChihoko AKIYAMA
Life of this patent
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Abstract
A semiconductor device includes a substrate, an active region and an inactive region surrounding the active region, a gate electrode, a drain electrode and a source electrode on the active region, a drain interconnection including a drain finger and a drain bar, and a source interconnection including a source finger and a source bar. The source bar is located on an opposite side of the drain bar across the active region in a first direction. The source electrode includes a first side facing the drain bar in the first direction and a first depression in a middle of the first side. A first depth of the first depression in the first direction is equal or more than a first interval between the drain bar and the first side in the first direction.
Claims14
A semiconductor device comprising:
- a substrate;
- an active region and an inactive region surrounding the active region, the active region and the inactive region being located on the substrate;
- a gate electrode, a drain electrode and a source electrode on the active region, the gate electrode, the drain electrode and the source electrode extending in a first direction;
- a drain interconnection including:
- a drain finger having a pattern along a planer shape of the drain electrode;
- and
- a drain bar on the inactive region, the drain bar extending in a second direction intersecting with the first direction and being connected to the drain finger;
- and
- a source interconnection including:
- a source finger having a pattern along a planar shape of the source electrode;
- and
- a source bar on the inactive region, the source bar extending in the second direction and being connected to the source finger,
- wherein the source bar is located on an opposite side of the drain bar across the active region in the first direction,
- wherein the source electrode includes a first side facing the drain bar in the first direction and a first depression in a middle of the first side, and
- wherein a first depth of the first depression in the first direction is equal or more than a first interval between the drain bar and the first side in the first direction.
A semiconductor device comprising:
- an active region and an inactive region surrounding the active region;
- a gate electrode, a drain electrode and a source electrode on the active region, the gate electrode, the drain electrode and the source electrode extending in a first direction;
- a drain interconnection including a drain bar on the inactive region, the drain bar extending in a second direction intersecting with the first direction and being electrically connected to the drain electrode;
- and
- a source interconnection including a source bar on the inactive region, the source bar extending in the second direction and being electrically connected to the source electrode,
- wherein the source bar is located on an opposite side of the drain bar across the active region in the first direction,
- wherein the source electrode includes a first side facing the drain bar and a first depression in a middle of the first side, the first depression being depressed from the first side to a, middle of the source electrode in a plan view, and
- wherein a first depth of the first depression in the first direction is equal or more than a first interval between the drain bar and the first side in the first direction.
Dependencies are inferred from the claim text.