Semiconductor device and method of manufacturing the same
AssigneeDynax Semiconductor, Inc.
InventorsPan PAN, Naiqian ZHANG, Xi SONG, Jianhua XU
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Abstract
A semiconductor device, comprising: a semiconductor substrate; a source, a gate and a drain fabricated on one side of the semiconductor substrate; a via hole region reserved in the region of the source; and an etching stopping layer made in the via hole region as well as a via hole under the etching stopping layer penetrating through the semiconductor substrate.
Claims18
A semiconductor device, wherein the semiconductor device comprises:
- a semiconductor substrate;
- a source, a gate and a drain fabricated on one side of the semiconductor substrate;
- a via hole region reserved in the region of the source;
- and
- an etching stopping layer made in the via hole region;
- and
- a via hole under the etching stopping layer, which penetrates through the semiconductor substrate.
A method of manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate;
- fabricating the source, the gate and the drain on one side of the semiconductor substrate, when forming the source, the via hole region without OHMIC metal of the source in it is reserved within the region where the source is located;
- forming the etching the etching stopping layer in the reserved via hole region;
- and
- etching to form the via holes penetrating through the semiconductor substrate under the etching stopping layer from the side of the semiconductor substrate far away from the source.
The method of manufacturing a semiconductor device according to 15, wherein the etching selection ratio of the etching stopping layer is larger than that of the semiconductor substrate.
Dependencies are inferred from the claim text.