Semiconductor device

A semiconductor device comprising:

• a silicon carbide layer having a first plane and a second plane facing the first plane;
• a first silicon carbide region of a first conductivity type provided in the silicon carbide layer;
• a second silicon carbide region of a second conductivity type provided between the first silicon carbide region and the first plane;
• a third silicon carbide region of the second conductivity type provided between the first silicon carbide region and the first plane, the third silicon carbide region extending in a first direction parallel to the first plane, the third silicon carbide region being connected to the second silicon carbide region, and the third silicon carbide region having a first width in a second direction, the second direction being parallel to the first plane and perpendicular to the first direction, the first width being narrower than a second width of the second silicon carbide region in the second direction;
• a first electrode provided on a side of the first plane of the silicon carbide layer and the electrode being in contact with the first silicon carbide region;
• a second electrode provided on a side of the second plane of the silicon carbide layer;
• and
• a metal silicide layer provided between the first electrode and the second silicon carbide region, the metal silicide layer having a portion being in contact with the first plane, and a shape of the portion being an octagon.