Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
AssigneeKabushiki Kaisha Toshiba
InventorTatsuo Shimizu
Life of this patent
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Abstract
A semiconductor device according to an embodiment includes a silicon carbide layer; a gate electrode; a gate insulating layer provided between the silicon carbide layer and the gate electrode; and a region located between the silicon carbide layer and the gate insulating layer, the region having a first bonding structure, the first bonding structure including a threefold coordinated first nitrogen atom bonded to three first silicon atoms, a threefold coordinated second nitrogen atom bonded to three second silicon atoms, and a threefold coordinated third nitrogen atom bonded to three third silicon atoms, the first to third nitrogen atoms being adjacent to each other in the first bonding structure.
Claims23
A semiconductor device comprising:
- a silicon carbide layer;
- a gate electrode;
- a gate insulating layer provided between the silicon carbide layer and the gate electrode;
- and
- a region located between the silicon carbide layer and the gate insulating layer, the region having a first bonding structure, the first bonding structure including a threefold coordinated first nitrogen atom bonded to three first silicon atoms, a threefold coordinated second nitrogen atom bonded to three second silicon atoms, and a threefold coordinated third nitrogen atom bonded to three third silicon atoms, the first to third nitrogen atoms being adjacent to each other in the first bonding structure.
A semiconductor device comprising:
- a silicon carbide layer;
- a gate electrode;
- a gate insulating layer provided between the silicon carbide layer and the gate electrode;
- and
- a region located between the silicon carbide layer and the gate insulating layer, a spectrum of the region obtained by X-ray photoelectron spectroscopy having a first peak and a second peak, the first peak caused by a threefold coordinated first nitrogen atom bonded to three first silicon atoms, the first peak having first binding energy and first intensity, the second peak caused by a threefold coordinated second nitrogen atom bonded to three second silicon atoms, the second peak having second binding energy higher than the first binding energy and second intensity,
- wherein an off angle between a surface of the silicon carbide layer facing the gate insulating layer and an m face is equal to or less than 8 degrees.
A method for manufacturing a semiconductor device, the method comprising:
- forming a gate insulating layer on a silicon carbide layer;
- performing a first heat treatment of irradiating the gate insulating layer with atomic hydrogen (H) in a nitrogen atmosphere of 1000° C. or higher;
- and
- forming a gate electrode on the gate insulating layer.
Dependencies are inferred from the claim text.