Semiconductor device

A semiconductor device comprising:

• a silicon carbide layer having a first plane and a second plane opposite to the first plane;
• a first silicon carbide region of a first conductivity type provided in the silicon carbide layer;
• a second silicon carbide region of a second conductivity type provided between the first silicon carbide region and the first plane;
• a third silicon carbide region of the second conductivity type provided between the first silicon carbide region and the first plane;
• a fourth silicon carbide region of the first conductivity type provided between the second silicon carbide region and the first plane;
• a first gate electrode provided on a side of the first plane of the silicon carbide layer;
• a second gate electrode provided on a side of the first plane of the silicon carbide layer;
• a first gate insulating layer provided between the first gate electrode and the second silicon carbide region;
• a second gate insulating layer provided between the second gate electrode and the third silicon carbide region;
• a silicide layer provided on the fourth silicon carbide region;
• a first electrode provided on a side of the first plane of the silicon carbide layer, the first electrode having a first portion located between the first gate electrode and the second gate electrode and a second portion located between the first portion and the first gate electrode, the first portion being in contact with the first silicon carbide region between the second silicon carbide region and the third silicon carbide region, and the second portion being in contact with the silicide layer;
• a second electrode provided on a side of the second plane of the silicon carbide layer;
• and
• an insulating layer provided between the first portion and the second portion, having a first side surface on a side of the first portion and a second side surface on a side of the second portion, a first angle between the first side surface and the first plane being smaller than a second angle between the second side surface and the first plane.