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US 2020/0091293 A1Published application
Semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorKanako Komatsu
Life of this patent
Estimating the term…
Abstract
Among multiple drain regions, a contact surface area between second contacts and a drain region most proximal to a central portion of an element region in a second direction is less than a contact surface area between second contacts and a drain region disposed on an outermost side of the element region in the second direction. The multiple drain regions are arranged in the second direction.
Claims20
A semiconductor device, comprising:
- a semiconductor layer of a first conductivity type;
- a plurality of band-shaped regions extending in a first direction and being provided on the semiconductor layer;
- a plurality of drain regions extending in the first direction, being provided on the semiconductor layer, being separated from the band-shaped regions, and being of a second conductivity type;
- a gate insulating film provided in a region directly above a region of the semiconductor layer between one of the band-shaped regions and one of the drain regions;
- a gate electrode extending in the first direction and being provided on the gate insulating film;
- first contacts connected to the band-shaped regions;
- and
- second contacts connected to the drain regions,
- each of the band-shaped regions including
- a back gate region of the first conductivity type, an impurity concentration of the back gate region being higher than an impurity concentration of the semiconductor layer, and
- a source region of the second conductivity type, an impurity concentration of the source region being higher than the impurity concentration of the semiconductor layer,
- each of the plurality of band-shaped regions and each of the plurality of drain regions being arranged alternately in a second direction in an element region,
- among the plurality of drain regions, a contact surface area between the second contacts and the drain region most proximal to a central portion of the element region in the second direction being less than a contact surface area between the second contacts and the drain region disposed on an outermost side of the element region in the second direction.
10 more elements
A semiconductor device, comprising:
- a semiconductor layer of a first conductivity type;
- a plurality of band-shaped regions extending in a first direction and being provided on the semiconductor layer;
- a plurality of drain regions extending in the first direction, being provided on the semiconductor layer, being separated from the band-shaped regions, and being of a second conductivity type;
- a gate insulating film provided in a region directly above a region of the semiconductor layer between one of the band-shaped regions and one of the drain regions;
- a gate electrode extending in the first direction and being provided on the gate insulating film;
- first contacts connected to the band-shaped regions;
- and
- second contacts connected to the drain regions,
- each of the band-shaped regions including
- a back gate region of the first conductivity type, an impurity concentration of the back gate region being higher than an impurity concentration of the semiconductor layer, and
- a source region of the second conductivity type, an impurity concentration of the source region being higher than the impurity concentration of the semiconductor layer,
- each of the plurality of band-shaped regions and each of the plurality of drain regions being arranged alternately in a second direction in an element region,
- among the plurality of band-shaped regions, a contact surface area between the first contacts and the band-shaped region most proximal to a central portion of the element region in a second direction being less than a contact surface area between the first contacts and the band-shaped region disposed on an outermost side of the element region in the second direction.
10 more elements
A semiconductor device, comprising:
- a semiconductor layer of a first conductivity type;
- a plurality of band-shaped regions extending in a first direction and being provided on the semiconductor layer;
- a plurality of drain regions extending in the first direction, being provided on the semiconductor layer, being separated from the band-shaped regions, and being of a second conductivity type;
- a gate insulating film provided in a region directly above a region of the semiconductor layer between one of the band-shaped regions and one of the drain regions;
- a gate electrode extending in the first direction and being provided on the gate insulating film;
- first contacts connected to the band-shaped regions;
- and
- second contacts connected to the drain regions,
- each of the band-shaped regions including
- a back gate region of the first conductivity type, an impurity concentration of the back gate region being higher than an impurity concentration of the semiconductor layer, and
- a source region of the second conductivity type, an impurity concentration of the source region being higher than the impurity concentration of the semiconductor layer,
- each of the plurality of band-shaped regions and each of the plurality of drain regions being arranged alternately in a second direction in an element region,
- a contact surface area between a second region and the second contacts being less than a contact surface area between a first region and the second contacts and a contact surface area between a third region and the second contacts when at least one of the drain regions is subdivided into the first region, the second region, and the third region, when the second region is disposed between the first region and the third region in the first direction, and when a length of the first region, a length of the second region, and a length of the third region in the first direction are set to be equal to each other.
10 more elements
A semiconductor device, comprising:
- a semiconductor layer of a first conductivity type;
- a plurality of band-shaped regions extending in a first direction and being provided on the semiconductor layer;
- a plurality of drain regions extending in the first direction, being provided on the semiconductor layer, being separated from the band-shaped regions, and being of a second conductivity type;
- a gate insulating film provided in a region directly above a region of the semiconductor layer between one of the band-shaped regions and one of the drain regions;
- a gate electrode extending in the first direction and being provided on the gate insulating film;
- first contacts connected to the band-shaped regions;
- and
- second contacts connected to the drain regions,
- each of the band-shaped regions including
- a back gate region of the first conductivity type, an impurity concentration of the back gate region being higher than an impurity concentration of the semiconductor layer, and
- a source region of the second conductivity type, an impurity concentration of the source region being higher than the impurity concentration of the semiconductor layer,
- each of the plurality of band-shaped regions and each of the plurality of drain regions being arranged alternately in a second direction in an element region,
- a contact surface area between a second region and the first contacts being less than a contact surface area between a first region and the first contacts and a contact surface area between a third region and the first contacts when at least one of the band-shaped regions is subdivided into the first region, the second region, and the third region, when the second region is disposed between the first region and the third region in the first direction, and when a length of the first region, a length of the second region, and a length of the third region in the first direction are set to be equal to each other.
10 more elements
A semiconductor device, comprising:
- a semiconductor layer of a first conductivity type;
- a plurality of band-shaped regions extending in a first direction and being provided on the semiconductor layer;
- a plurality of drain regions extending in the first direction, being provided on the semiconductor layer, being separated from the band-shaped regions, and being of a second conductivity type;
- a gate insulating film provided in a region directly above a region of the semiconductor layer between one of the band-shaped regions and one of the drain regions;
- a gate electrode extending in the first direction and being provided on the gate insulating film;
- first contacts connected to the band-shaped regions;
- and
- second contacts connected to the drain regions,
- each of the band-shaped regions including
- a back gate region of the first conductivity type, an impurity concentration of the back gate region being higher than an impurity concentration of the semiconductor layer, and
- a source region of the second conductivity type, an impurity concentration of the source region being higher than the impurity concentration of the semiconductor layer,
- each of the plurality of band-shaped regions and each of the plurality of drain regions being arranged alternately in a second direction in an element region,
- in the at least one of the first direction and the second direction, a contact surface area between the drain region disposed at a central portion of the element region and the second contacts being less than a contact surface area between the drain region other than the drain region disposed at a central portion of the element region and the second contacts, or, a contact surface area between the band-shaped region disposed at a central portion of the element region and the first contacts being less than a contact surface area between the band-shaped region other than the band-shaped region disposed at a central portion of the element region and the first contacts.
10 more elements
Dependencies are inferred from the claim text.