Semiconductor device

A semiconductor device, comprising:

• a semiconductor body including a first semiconductor layer of a first conductivity type;
• a first electrode provided on a front surface of the semiconductor body;
• a second electrode provided on a back surface of the semiconductor body;
• a plurality of control electrodes provided in the semiconductor body, the plurality of control electrodes extending in a first direction from the first electrode toward the second electrode, the plurality of control electrodes being arranged in a second direction along the front surface of the semiconductor body;
• and
• a plurality of first insulating films electrically insulating the plurality of control electrodes from the semiconductor body,
• the semiconductor body including
• a second semiconductor layer of a second conductivity type provided between the first electrode and the first semiconductor layer, the second semiconductor layer being positioned between two adjacent control electrodes of the plurality of control electrodes,
• a third semiconductor layer of the first conductivity type selectively provided between the first electrode and the second semiconductor layer,
• a fourth semiconductor layer of the second conductivity type provided between the first electrode and the first semiconductor layer, the fourth semiconductor layer being provided between other two adjacent control electrodes of the plurality of control electrodes,
• a fifth semiconductor layer of the second conductivity type provided between the first electrode and the fourth semiconductor layer, and
• a sixth semiconductor layer of the first conductivity type provided between the fourth semiconductor layer and the fifth semiconductor layer,
• a film thickness of a portion of a first insulating film being thinner than a film thickness of other portion of the first insulating film, the portion of the first insulating film being positioned between the sixth semiconductor layer and one of the other two control electrodes, the other portion of the first insulating film being positioned between the fourth semiconductor layer and the one of the other two control electrodes.

A semiconductor device, comprising:

• a semiconductor body including a first semiconductor layer of a first conductivity type;
• a first electrode provided on a front surface of the semiconductor body;
• a second electrode provided on a back surface of the semiconductor body;
• a plurality of control electrodes provided in the semiconductor body, the plurality of control electrodes extending in a direction from the first electrode toward the second electrode;
• and
• an insulating film electrically insulating the plurality of control electrodes from the semiconductor body,
• the semiconductor body including
• a second semiconductor layer of a second conductivity type provided between the first electrode and the first semiconductor layer, the second semiconductor layer being positioned between two adjacent control electrodes of the plurality of control electrodes,
• a third semiconductor layer of the first conductivity type provided between the first electrode and the second semiconductor layer,
• a fourth semiconductor layer of the second conductivity type provided between the first electrode and the first semiconductor layer, the fourth semiconductor layer being provided between other two adjacent control electrodes of the plurality of control electrodes,
• a fifth semiconductor layer of the second conductivity type provided between the first electrode and the fourth semiconductor layer, and
• a sixth semiconductor layer of the first conductivity type provided between the fourth semiconductor layer and the fifth semiconductor layer, the sixth semiconductor layer including trapping levels capturing carriers of the second conductivity type.