Iii-n metal-insulator-semiconductor field effect transistors with multiple gate dielectric materials

Abstract

Integrated circuits with III-N metal-insulator-semiconductor field effect transistor (MISFET) structures that employ one or more gate dielectric materials that differ across the MISFETs. Gate dielectric materials may be selected to modulate dielectric breakdown strength and/or threshold voltage between transistors. Threshold voltage may be modulated between two MISFET structures that may be substantially the same but for the gate dielectric. Control of the gate dielectric material may render some MISFETs to be operable in depletion mode while other MISFETs are operable in enhancement mode. Gate dielectric materials may be varied by incorporating multiple dielectric materials in some MISFETs of an IC while other MISFETs of the IC may include only a single dielectric material. Combinations of gate dielectric material layers may be selected to provide a menu of low voltage, high voltage, enhancement and depletion mode MISFETs within an IC.

Dependencies are inferred from the claim text.