Semiconductor Device with a Dopant Source
AssigneeInfineon Technologies AG
InventorMarkus Zundel
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Abstract
A semiconductor device includes a semiconductor body having a first surface. A first trench extends in a vertical direction into the semiconductor body. The semiconductor device also includes a first interlayer in the first trench and a first dopant source in the first trench. The first interlayer is arranged between the first dopant source and the semiconductor body, and the first dopant source includes a first dopant species. The semiconductor device also includes a semiconductor area doped with the first dopant species and which completely surrounds the first trench at least at a depth in the semiconductor body and adjoins the first trench.
Claims20
A semiconductor device, comprising:
- a semiconductor body having a first surface;
- a first trench that extends in a vertical direction into the semiconductor body;
- a first interlayer in the first trench;
- a first dopant source in the first trench, wherein the first interlayer is disposed between the first dopant source and the semiconductor body and the first dopant source includes a first dopant species;
- and
- a semiconductor area doped with the first dopant species and which completely surrounds the first trench at least at a depth in the semiconductor body and adjoins the first trench.
Dependencies are inferred from the claim text.