US 2020/0091283 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes a semiconductor substrate of a first conductivity type. The semiconductor substrate includes a first semiconductor region of a second conductivity type at a surface thereof, a second semiconductor region of the second conductivity type at the surface and surrounding the first semiconductor region, a third semiconductor region of the second conductivity type provided in the second semiconductor region at the surface and surrounding the first semiconductor region. The third semiconductor region has a concentration of a second conductivity type impurity higher than that of the second semiconductor region. A first insulating film is provided on a part of the first surface at which the second semiconductor region is provided. the first insulating film having an opening that exposes. A first electrode is provided on the first insulating film and electrically connected to the third semiconductor region via the opening.

Claims20

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate of a first conductivity type having a first surface and a second surface opposite to the first surface;
a first semiconductor region of a second conductivity type provided in the semiconductor substrate at the first surface;
a second semiconductor region of the second conductivity type provided in the semiconductor substrate at the first surface and surrounding the first semiconductor region;
a third semiconductor region of the second conductivity type provided in the second semiconductor region at the first surface, the third semiconductor region having a concentration of a second conductivity type impurity higher than that of the second semiconductor region;
a first insulating film provided on a part of the first surface at which the second semiconductor region is provided, the first insulating film having an opening that exposes the third semiconductor region;
and
a first electrode provided on the first insulating film and electrically connected to the third semiconductor region via the opening.

4 more elements

A semiconductor device, comprising:

a semiconductor substrate of a first conductivity type having a first surface and a second surface opposite to the first surface;
an emitter region of the first conductivity type provided in the semiconductor substrate at the first surface;
a base region of a second conductivity type provided in the semiconductor substrate below and adjacent to the emitter region;
a gate electrode provided in the semiconductor substrate at the first surface and surrounding the emitter region and the base region;
a gate insulating film insulating the gate electrode;
a ballast resistance region of the second conductivity type provided in the semiconductor substrate at the first surface and surrounding the gate electrode;
a variation of lateral doping (VLD) region of the second conductivity type provided in the semiconductor substrate at the first surface and surrounding the ballast resistance region;
a semiconductor region of the second conductivity type provided in the ballast resistance region at the first surface, the semiconductor region having a concentration of a second conductivity type impurity higher than that of the ballast resistance region;
a first insulating film provided on a part of the first surface that surrounds the emitter region and corresponds to the ballast resistance region, the first insulating film having a hole at the top of the semiconductor region;
a collector region of the first conductivity type provided in the semiconductor substrate at the second surface;
a first electrode provided on the first insulating film and electrically connected to the semiconductor region via the hole;
a second electrode electrically connected to the emitter region, and spaced apart from the first electrode;
and
a third electrode electrically connected to the collector region.

11 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20