Silicon carbide schottky diodes
AssigneeGriffith University
InventorsSima DIMITRIJEV, Jisheng HAN
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Abstract
A silicon carbide (SiC) Schottky diode comprises a layer of N-type SiC and a layer of P-type SiC in contact with the layer of N-type SiC creating a P-N junction. An anode is in contact with both the layer of N-type SiC and the layer of P-type SiC creating Schottky contacts between the anode and both the layer of N-type SiC and the layer of P-type SiC. An edge of the layer of P-type SiC is electrically active and comprises a tapered negative charge density at the P-N junction, which can be achieved by a tapered or sloping edge the layer of P-type SiC.
Claims13
A silicon carbide (SiC) Schottky diode comprising:
- a layer of N-type SiC;
- a layer of P-type SiC in contact with the layer of N-type SiC creating a P-N junction;
- and
- an anode in contact with both the layer of N-type SiC and the layer of P-type SiC creating Schottky contacts between the anode and both the layer of N-type SiC and the layer of P-type SiC, wherein an edge of the layer of P-type SiC is electrically active and comprises a slope that is sloping away from the anode to create a tapered negative charge density at the P-N junction.
A method of production of a silicon carbide Schottky diode comprising:
- forming a layer of P-type SiC in contact with a layer of N-type SiC creating a P-N junction;
- contacting an anode with both the layer of N-type SiC and the layer of P-type SiC creating Schottky contacts between the anode and both the layer of N-type SiC and the layer of P-type SiC;
- and
- forming an electrically active edge of the layer of P-type SiC by forming a slope that is sloping away from the anode to create a tapered negative charge density at the P-N junction.
Dependencies are inferred from the claim text.