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US 2020/0091279 A1Published application
Integrated circuit device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSun-min MOON, Su-hwan KIM, Hyun-jun KIM, Seong-yul PARK, Young-lim PARK, Jae-wan CHANG
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Abstract
In a capacitor of an integrated circuit, a crystallization induction film is obtained by oxidizing a surface of an electrode, and a dielectric structure is formed on the crystallization induction film, to reduce defect density generated in the dielectric film, improve leakage current, and reduce equivalent oxide thickness.
Claims21
An integrated circuit device comprising:
- an electrode, the electrode comprising a first metal;
- a buffer layer disposed on the electrode, the buffer layer comprising the first metal, oxygen atoms, and nitrogen atoms;
- and
- a dielectric structure disposed on the buffer layer, wherein the dielectric structure comprises:
- a crystallization induction film disposed on the buffer layer, the crystallization induction film comprising a first metal oxide film, the first metal oxide film comprising the first metal;
- and
- a first dielectric film disposed on the crystallization induction film, the first dielectric film comprising a second metal oxide film, the second metal oxide film comprising a second metal.
4 more elements
An integrated circuit device comprising:
- a substrate;
- a bottom electrode disposed over the substrate, the bottom electrode comprising a first metal;
- a top electrode disposed over the bottom electrode;
- a dielectric structure disposed between the bottom electrode and the top electrode;
- and
- a buffer layer disposed between the bottom electrode and the dielectric structure, the buffer layer comprising the first metal, oxygen atoms, and nitrogen atoms,
- wherein the dielectric structure comprises:
- a crystallization induction film disposed on the buffer layer;
- and
- a first dielectric film disposed on the crystallization induction film, the first dielectric film comprising a second metal oxide film, the second metal oxide film comprising a second metal.
7 more elements
An integrated circuit device comprising:
- a substrate;
- a bottom electrode disposed over the substrate, the bottom electrode comprising a first metal;
- a top electrode disposed over the bottom electrode;
- a dielectric structure disposed between the bottom electrode and the top electrode, the dielectric structure comprising:
- a crystallization induction film comprising a first metal oxide film, the first metal oxide film comprising the first metal, and the crystallization induction film disposed over a surface of the bottom electrode;
- a first dielectric film disposed on the crystallization induction film, the first dielectric film having a first band gap;
- and
- a second dielectric film disposed on the first dielectric film, the second dielectric film having a second band gap that is greater than the first band gap;
- and
- a buffer layer disposed between the bottom electrode and the crystallization induction film, the buffer layer comprising the first metal, oxygen atoms, and nitrogen atoms.
7 more elements
21-30. (canceled)
Dependencies are inferred from the claim text.