Integrated Circuits with Capacitors

A device comprising:

• a substrate;
• a plurality of fins disposed on the substrate;
• an isolation structure disposed on the substrate between the plurality of fins;
• a first electrode disposed on the isolation structure, wherein the first electrode forms a transistor gate;
• a second electrode disposed on the isolation structure, wherein the second electrode forms a source/drain contact;
• and
• a dielectric disposed between the first electrode and the second electrode.

A method comprising:

• receiving a substrate having a plurality of fins extending from the substrate;
• forming an isolation dielectric on the substrate between the plurality of fins;
• forming an isolation structure on the isolation dielectric;
• forming a gate structure on the isolation structure to define a first electrode of a capacitor;
• and
• forming a source/drain contact on the isolation structure to define a second electrode of the capacitor.