Memory device and fabrication method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorAn-Hao CHENG
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Abstract
A semiconductor device includes a semiconductor substrate, a capacitor structure, a first contact plug, and a spacer. The capacitor structure is over the semiconductor substrate. The capacitor structure includes a bottom electrode, a capacitor dielectric, and a top electrode. The bottom electrode is over the semiconductor substrate. The capacitor dielectric is over a first portion of the bottom electrode. The top electrode is over the capacitor dielectric. The first contact plug is on and connected to a second portion of the bottom electrode. The spacer is on at least a sidewall of the second portion of the bottom electrode.
Claims21
1-13. (canceled)
A method for fabricating a semiconductor device, comprising:
- forming a capacitor stack and a gate stack over a first region and a second region of a semiconductor substrate respectively, wherein the capacitor stack has a bottom electrode, a dummy top electrode, and a capacitor dielectric between the bottom electrode and the dummy top electrode, and the gate stack has a gate dielectric and a dummy gate electrode over the gate dielectric;
- removing a first portion of the dummy top electrode and the dummy gate electrode to form a first opening in the capacitor stack and a second opening in the gate stack respectively;
- and
- forming a first electrode and a metal gate electrode in the first opening and the second opening respectively.
A method for fabricating a semiconductor device, comprising:
- forming a capacitor stack over a semiconductor substrate, wherein the capacitor stack has a bottom electrode, a capacitor dielectric over the bottom electrode, a top electrode over the capacitor dielectric, and a dummy top electrode over the top electrode;
- etching a first portion of the dummy top electrode until reaching a top surface of the top electrode, wherein the top electrode has a higher etch resistance to etching the first portion of the dummy top electrode than that of the dummy top electrode;
- and
- forming a metal electrode on a top surface of the top electrode.
A method for fabricating a semiconductor device, comprising:
- forming a capacitor stack over a semiconductor substrate, wherein the capacitor stack has a bottom electrode, a capacitor dielectric over the bottom electrode, and a dummy top electrode over the capacitor dielectric;
- removing a first portion of the dummy top electrode and a portion of the capacitor dielectric underlying the first portion of the dummy top electrode to form a first opening exposing the bottom electrode;
- forming a first interlayer dielectric in the first opening;
- and
- forming a contact plug connected to the bottom electrode in the first interlayer dielectric.
Dependencies are inferred from the claim text.