Integrated circuit device

An integrated circuit device comprising:

• a lower electrode;
• an upper electrode;
• and
• a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure comprising a first surface facing the lower electrode and a second surface facing the upper electrode, the dielectric layer structure comprising:
• a first dielectric layer comprising a first dielectric material and a plurality of grains extending from the first surface to the second surface;
• and
• a second dielectric layer comprising a second dielectric material differing from the first dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer at a level lower than the second surface,
• wherein the first dielectric layer has a first thickness in a first direction vertical to the first surface, and the second dielectric layer has a second thickness less than the first thickness in the first direction.

An integrated circuit device comprising:

• a lower electrode;
• an upper electrode;
• and
• a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure comprising a first surface facing the lower electrode and a second surface facing the upper electrode, the dielectric layer structure comprising:
• a first dielectric layer comprising a first dielectric material and a plurality of grains extending from the first surface to the second surface;
• and
• a second dielectric layer comprising a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer at a level lower than the second surface, the second dielectric material comprising a material having a melting point lower than a melting point of the first dielectric material and having bandgap energy higher than bandgap energy of the first dielectric material.