Non-linear gate dielectric material for thin-film transistors

A method for forming a semiconductor device, the method comprising:

• forming a channel layer above a substrate;
• forming a gate dielectric layer adjacent to the channel layer, wherein the gate dielectric layer includes a non-linear gate dielectric material;
• and
• forming a gate electrode separated from the channel layer by the gate dielectric layer, wherein the gate electrode, the channel layer, and the gate dielectric layer form a non-linear capacitor.

A computing device, comprising:

• a circuit board;
• and
• a memory device coupled to the circuit board and including a memory array, wherein the memory array includes a plurality of memory cells, a memory cell of the plurality of memory cells includes a transistor and a storage cell, and wherein the transistor includes:
• a channel layer above a substrate;
• a gate dielectric layer adjacent to the channel layer, wherein the gate dielectric layer includes a non-linear gate dielectric material;
• and
• a gate electrode coupled to a word line of the memory array, wherein the gate electrode is separated from the channel layer by the gate dielectric layer, wherein the gate electrode, the channel layer, and the gate dielectric layer form a non-linear capacitor;
• a source electrode adjacent to the channel layer and coupled to a bit line of the memory array;
• and
• a drain electrode adjacent to the channel layer and coupled to a first electrode of the storage cell;
• and
• the storage cell further includes a second electrode coupled to a source line of the memory array.