Semiconductor memory device having a vertical active region
AssigneeInternational Business Machines Corporation
InventorsJUNTAO LI, Kangguo Cheng, TAKASHI ANDO, DEXIN KONG
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Abstract
Embodiments of the invention provide a semiconductor memory device. In some embodiments, the device includes a bottom electrode extending in a y-direction relative to top surface of a substrate and a top electrode extending in an x-direction relative to the top surface of the substrate. An active area is located at the cross-section between the bottom electrode and the top electrode and is located on vertical side walls extending in a z-direction of the semiconductor memory device with respect to the top surface of the substrate. An insulating layer is located in the active area in between the top electrode and the bottom electrode.
Claims20
A method of forming a semiconductor memory device, the method comprising:
- selectively etching a plurality bottom electrode regions extending in a y-direction of a substrate;
- depositing a bottom electrode in each of the bottom electrode regions;
- depositing a cap layer onto a top surface of the bottom electrode;
- patterning a plurality of orthogonal mask regions extending in an x-direction of the substrate, orthogonal to the bottom electrode regions, wherein the plurality of orthogonal mask regions forms a plurality of unprotected areas of the substrate;
- selectively etching the plurality of unprotected areas of the substrate to form an etched surface;
- depositing an insulating layer on the etched surface;
- depositing a top electrode on the insulating layer to form a metal surface;
- and
- planarizing the metal surface to expose an upper surface of the plurality of the orthogonal mask regions;
- wherein an active area between the top electrode and the bottom electrode is located on a vertical side wall extending in a z-direction of the semiconductor memory device.
A method of forming a semiconductor memory device, the method comprising:
- forming a bottom electrode extending in a y-direction relative to a top surface of a substrate;
- and
- forming a top electrode extending in an x-direction relative to the top surface of the substrate;
- wherein an active area is located at the cross-section between the bottom electrode and the top electrode, the active area positioned on vertical side walls extending in a z-direction of the semiconductor memory device with respect to the top surface of the substrate;
- and
- wherein an insulating layer is located in the active area between the top electrode and the bottom electrode.
Dependencies are inferred from the claim text.