Storage device and manufacturing method for the same

A storage device, comprising:

• a substrate;
• a first stacked body provided on the substrate, and the first stacked body having first to nth (n is an integer of 3 or more) conductive layers stacked in a direction perpendicular to a surface of the substrate;
• a region including a part of the first stacked body, and the region having a step structure including the first to nth conductive layers;
• a portion provided in a peripheral portion of the first stacked body, and the portion having a projected shape or a recessed shape provided on the same plane as a plane including the first conductive layer or on a side closer to the substrate than the plane including the first conductive layer;
• and
• first to nth electrodes provided in the region, the first to nth electrodes connected to the first to nth conductive layers, and the first to nth electrodes extending in a direction perpendicular to the surface of the substrate.

A storage device manufacturing method, comprising:

• forming, on a substrate, first to nth (n is an integer of 3 or more) conductive layers stacked in a direction perpendicular to a surface of the substrate;
• forming a first region having a first step structure including the first to nth conductive layers by using first to mth (m is an integer of 3 or more and n or less) lithography processes and a plurality of etching processes;
• forming an electrode connected to at least one of the first to nth conductive layers in the first region, the electrode extending in a direction perpendicular to a surface of the substrate;
• forming a first pattern on the pth (3≤p≤n) conductive layer by the sth (1≤s≤m−2) lithography process and one of the plurality of etching processes;
• covering the first pattern with a resist in the (s+1)th lithography process;
• forming a second pattern in the (p−1)th conductive layer by another one of the etching process after covering the first pattern with a resist;
• and
• providing an opening portion in a resist pattern so as to expose a first end portion of the first pattern and a second end portion of the second pattern in the (s+2)th lithography process.

A storage device manufacturing method, comprising:

• forming a plurality of conductive layers stacked in a direction perpendicular to the surface of a substrate on the substrate;
• forming a projected shape or a recessed shape by processing one of the plurality of conductive layers;
• forming a region having a step structure including at least a part of the conductive layers by using a plurality of lithography processes and a plurality of etching processes after forming the portion;
• and
• forming an electrode connected to at least one of the plurality of conductive layers of the region, the electrode extending in a direction perpendicular to the surface of the substrate,
• wherein the portion is not covered with a resist in at least one of the lithography processes.

A storage device manufacturing method, comprising:

• forming first to nth (n is an integer of 3 or more) conductive layers stacked in a direction perpendicular to the surface of a substrate on the substrate;
• forming a first region having a first step structure including the first to nth conductive layers by using a plurality of lithography processes and a plurality of etching processes;
• forming an electrode connected to at least one of the first to nth conductive layers in the first region, the electrode extending in a direction perpendicular to the surface of the substrate;
• forming a first pattern on the pth (3≤p≤n) conductive layer by first lithography process being one of the plurality of lithography processes and one of the plurality of etching process;
• covering the first pattern with a resist in the second lithography process being another one of the plurality of lithography processes;
• forming a second pattern in the qth (q≤p−1) conductive layer by another one of the plurality of etching process after covering the first pattern with a resist;
• and
• providing an opening portion in a resist pattern so as to expose a first end portion of the first pattern and a second end portion of the second pattern in the third lithography process being the other one of the plurality of lithography processes.