Phase change memory with improved recovery from element segregation
AssigneeInternational Business Machines Corporation
InventorKangguo Cheng
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Abstract
A method is presented for reducing element segregation of a phase change material (PCM). The method includes forming a bottom electrode, constructing a layered stack over the bottom electrode, the layered stack including the PCM separated by one or more electrically conductive and chemically stable materials, and forming a top electrode over the layered stack. The PCM is Ge—Sb—Te (germanium-antimony-tellurium or GST) and the one or more electrically conductive and chemically stable materials are titanium nitride (TiN) segments.
Claims20
A method for reducing element segregation of a phase change material (PCM), the method comprising:
- forming a bottom electrode;
- constructing a layered stack over the bottom electrode, the layered stack including the PCM separated by one or more electrically conductive and chemically stable materials;
- and
- forming a top electrode over the layered stack.
A method for reducing element segregation of a phase change material (PCM), the method comprising:
- incorporating a PCM cell within a crossbar array, the PCM cell constructed by:
- forming a bottom electrode over a substrate;
- forming a stack over the bottom electrode, the stack including alternating layers of the PCM and electrically conductive and chemically stable materials;
- and
- forming a top electrode over the stack.
A semiconductor structure for reducing element segregation of a phase change material (PCM), the semiconductor structure comprising:
- a bottom electrode;
- a layered stack disposed over the bottom electrode, the layered stack including the PCM separated by one or more electrically conductive and chemically stable materials;
- and
- a top electrode disposed over the layered stack.
Dependencies are inferred from the claim text.