US 2020/0091237 A1 · STEEP-SWITCH VERTICAL FIELD EFFECT TRANSISTOR

Abstract

Embodiments of the invention are directed to a method and resulting structures for a steep-switch vertical field effect transistor (SS-VFET). In a non-limiting embodiment of the invention, a semiconductor fin is formed vertically extending from a bottom source or drain region of a substrate. A top source or drain region is formed on a surface of the semiconductor fin and a top metallization layer is formed on the top source or drain region. A bi-stable resistive system is formed on the top metallization layer. The bi-stable resistive system includes an insulator-to-metal transition material or a threshold-switching selector. The SS-VFET provides a subthreshold switching slope of less than 60 millivolts per decade.

Claims16

Dependent claims

A method for forming a semiconductor device, the method comprising:

forming a semiconductor fin vertically extending from a bottom source or drain region of a substrate;
recessing a portion of the bottom source or drain region;
forming a bottom metallization layer on the recessed portion of the bottom source or drain region;
and
forming a bi-stable resistive system on the bottom metallization layer.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/668,116Filed 30 Oct 2019

Priority

11 Oct 2017

Published

19 Mar 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10B 63/34
Comprising selection components having three or more electrodes, e.g. transistors: of the vertical channel field-effect transistor type
H10D 30/025
Of FETs having insulated gates [IGFET]: of vertical IGFETs
H10D 30/63
Insulated-gate field-effect transistors [IGFET]: vertical IGFETs
H10D 62/151
Source or drain regions of field-effect devices: of igfets

Steep-switch vertical field effect transistor

Life of this patent

Steep-switch vertical field effect transistor

Life of this patent

Abstract

Claims16