Switching element, variable resistance memory device, and method of manufacturing the switching element
AssigneeSamsung Electronics Co., Ltd.
InventorsJinwoo LEE, Zhe WU, Kyubong JUNG, Seung-geun YU, Ja Bin LEE
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Abstract
A switching element includes a lower barrier electrode disposed on a substrate, a switching pattern disposed on the lower barrier electrode, and an upper barrier electrode disposed on the switching pattern. The switching pattern includes a first switching pattern, and a second switching pattern disposed on the first switching pattern and having a density different from a density of the first switching pattern.
Claims11
1-16. (canceled)
A method of manufacturing a switching element, the method comprising:
- forming a lower barrier layer on a substrate;
- forming a switching layer on the lower barrier layer;
- forming an upper barrier layer on the switching layer;
- and
- removing portions of the lower barrier layer, the switching layer and the upper barrier layer to form a switching element,
- wherein the forming of the switching layer comprises:
- forming a first switching layer;
- and
- forming a second switching layer on the first switching layer, and
- wherein the second switching layer has a different density from a density of the first switching layer.
A method of manufacturing a switching element, the method comprising:
- forming a lower barrier layer on a substrate;
- forming a switching layer on the lower barrier layer;
- and
- forming an upper barrier layer on the switching layer,
- wherein the forming of the switching layer comprises forming a high density switching layer on the lower barrier layer using a Kr gas.
A method of manufacturing a switching element, the method comprising:
- forming a lower barrier layer on a substrate;
- forming a switching layer on the lower barrier layer;
- and
- forming an upper barrier layer on the switching layer,
- wherein the forming of the switching layer comprises forming a high density switching layer including Kr.
Dependencies are inferred from the claim text.