Nonvolatile memory device
AssigneeToshiba Memory Corporation
InventorDaisaburo TAKASHIMA
Life of this patent
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Abstract
According to one embodiment, a nonvolatile memory device includes a memory cell including a first two-terminal resistance change memory element storing memory cell information, and a second two-terminal resistance change memory element, connected in series to the first two-terminal resistance change memory element, and functioning as a selector element, word and bit lines connected to the memory cell. When memory cell information is to be written, if the memory cell is a selected memory cell, the second two-terminal resistance change memory element is set to the low resistance state and, if the memory cell is an unselected memory cell, the second two-terminal resistance change memory element is set to the high resistance state.
Claims11
A nonvolatile memory device comprising:
- a memory cell including a first two-terminal resistance change memory element having a low resistance state and a high resistance state and storing therein memory cell information based on the low resistance state and the high resistance state, and a second two-terminal resistance change memory element having a low resistance state and a high resistance state, connected in series to the first two-terminal resistance change memory element, and functioning as a selector element for selecting the first two-terminal resistance change memory element;
- a word line connected to one end of the memory cell;
- and
- a bit line connected to the other end of the memory cell, wherein
- the nonvolatile memory device is configured in such a manner that when memory cell information is to be written, if the memory cell is a selected memory cell, the second two-terminal resistance change memory element is set to the low resistance state and, if the memory cell is an unselected memory cell, the second two-terminal resistance change memory element is set to the high resistance state.
Dependencies are inferred from the claim text.