Vertical array of resistive switching devices having a tunable oxygen vacancy concentration

A method of fabricating a vertical resistive device, the method comprising:

• forming a conductive horizontal electrode;
• forming an opening that extends through the horizontal electrode;
• depositing a filament region within the opening such that the filament region is communicatively coupled to a sidewall of the horizontal electrode;
• depositing a barrier region within the opening such that the barrier region is communicatively coupled to the filament region;
• forming a conductive vertical electrode within a remaining portion of the opening such that the vertical electrode is communicatively coupled to the barrier region;
• wherein:
• the vertical electrode comprises a first conductive alloy material;
• oxygen vacancy formation in the filament region is controlled by the first conductive alloy material of the vertical electrode;
• and
• a room temperature resistivity of the first conductive alloy material is below about 5×10−8 ohm meters and controlled by at least one of the metals that form the first conductive alloy material;
• and
• forming a first dielectric layer across from the horizontal electrode.

A method of fabricating a vertical resistive device, the method comprising:

• forming a conductive horizontal electrode;
• forming an opening that extends through the horizontal electrode;
• depositing a filament region within the opening such that the filament region is communicatively coupled to a sidewall of the horizontal electrode;
• depositing a barrier region within the opening such that the barrier region is communicatively coupled to the filament region;
• and
• forming a conductive vertical electrode within a remaining portion of the opening such that the vertical electrode is communicatively coupled to the barrier region;
• wherein:
• the vertical electrode comprises a first conductive alloy material;
• oxygen vacancy formation in the filament region is controlled by the first conductive alloy material of the vertical electrode;
• and
• a room temperature resistivity of the first conductive alloy material is below about 5×10−8 ohm meters and controlled by at least one of the metals that form the first conductive alloy material;
• and
• wherein the vertical resistive device functions as a resistive switching device (RSD):