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US 2020/0091229 A1Published application
Magnetoresistive random acess memory wherein number of memory cells in each string is equal to number of strings connected in parallel
AssigneeUnited Microelectronics Corp.
InventorsTing-Hsiang Huang, Yi-Chung Sheng, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chih-Kai Kang
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Abstract
A magnetic random access memory (MRAM) includes device strings coupled in parallel, each comprising magnetic tunnel junctions (MTJs) coupled in serial, wherein a quantity of the MTJs of each of the device strings is equal to a quantity of the device strings, and an equivalent resistance (Req) of the MTJs is equal to an average of the sum of a high resistance of one of the MTJs and a low resistance of another MTJ.
Claims20
A magnetic random access memory (MRAM), comprising:
- device strings coupled in parallel, each comprising magnetic tunnel junctions (MTJs) coupled in serial, wherein a number of the MTJs of each of the device strings is equal to a number of the device strings, one of the MTJs has a pinned layer coupled to a pinned layer of a neighboring one of the MTJs by a lower level metal interconnection, and an equivalent resistance (Req) of the MTJs is equal to an average of the sum of a high resistance of one of the MTJs and a low resistance of another MTJ.
(canceled)
A magnetic random access memory (MRAM), comprising:
- device strings coupled in parallel, each comprising magnetic tunnel junctions (MTJs) coupled in serial, wherein a number of the MTJs of each of the device strings is equal to a number of the device strings, one of the MTJs has a free layer coupled to a free layer of a neighboring one of the MTJs by an upper level metal interconnection, and an equivalent resistance (Req) of the MTJs is equal to an average of the sum of a high resistance of one of the MTJs and a low resistance of another MTJ.
Dependencies are inferred from the claim text.