Magnetic memory device
AssigneeToshiba Memory Corporation
InventorYoshinori KUMURA
Life of this patent
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Abstract
According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect provided on the upper layer side of the first interconnect, a third interconnect provided on the upper layer side of the second interconnect, a first memory cell provided between the first interconnect and the second interconnect and including a first stacked structure including a magnetic layer, a second memory cell provided between the second interconnect and the third interconnect and including a second stacked structure including a magnetic layer, and a light reflection layer provided on the upper layer side of the first interconnect and on the lower layer side of the third interconnect and having optical reflectance higher than optical transmittance.
Claims16
A magnetic memory device comprising:
- a first interconnect;
- a second interconnect provided on the upper layer side of the first interconnect;
- a third interconnect provided on the upper layer side of the second interconnect;
- a first memory cell provided between the first interconnect and the second interconnect and including a first stacked structure including a magnetic layer;
- a second memory cell provided between the second interconnect and the third interconnect and including a second stacked structure including a magnetic layer;
- and
- a light reflection layer provided on the upper layer side of the first interconnect and on the lower layer side of the third interconnect and having optical reflectance higher than optical transmittance.
A magnetic memory device comprising:
- a first interconnect;
- a second interconnect provided on the upper layer side of the first interconnect;
- a third interconnect provided on the upper layer side of the second interconnect;
- a first memory cell provided between the first interconnect and the second interconnect and including a first stacked structure including a magnetic layer;
- a second memory cell provided between the second interconnect and the third interconnect and including a second stacked structure including a magnetic layer;
- and
- a light-absorbing layer provided on the upper layer side of the second interconnect and on the lower layer side of the third interconnect and having optical absorptance higher than optical transmittance.
A magnetic memory device comprising:
- a first interconnect;
- a second interconnect provided on the upper layer side of the first interconnect;
- a third interconnect provided on the upper layer side of the second interconnect;
- a first memory cell provided between the first interconnect and the second interconnect and including a first stacked structure including a magnetic layer;
- and
- a second memory cell provided between the second interconnect and the third interconnect and including a second stacked structure including a magnetic layer, wherein
- a cavity is provided on the upper layer side of the first interconnect and on the lower layer side of the third interconnect.
A magnetic memory device comprising:
- a first interconnect;
- a second interconnect provided on the upper layer side of the first interconnect;
- a third interconnect provided on the upper layer side of the second interconnect;
- a first memory cell provided between the first interconnect and the second interconnect and including a first stacked structure including a magnetic layer;
- and
- a second memory cell provided between the second interconnect and the third interconnect and including a second stacked structure including a magnetic layer, wherein
- the second interconnect has lower thermal conductivity than the first interconnect.
Dependencies are inferred from the claim text.