Magnetic memory device

A magnetic memory device comprising:

• a first memory cell which includes a first stacked structure including a magnetic layer;
• and
• a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer,
• wherein each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and
• at least one of the first stacked structure and the second stacked structure further includes a resistance adjustment layer which adjusts a resistance of the second stacked structure.

A magnetic memory device comprising:

• a first memory cell which includes a first stacked structure including a magnetic layer;
• and
• a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer,
• wherein each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and
• a concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.