Method of manufacturing an optoelectronic device comprising a plurality of diodes

A method of manufacturing an optoelectronic device, comprising the steps of:

• a) transferring, onto a connection surface of a control circuit, an active diode stack comprising at least first and second doped semiconductor layers of opposite conductivity types, so that the second semiconductor layer of the stack faces the connection surface of the control circuit and is separated from the connection surface of the control circuit by at least one electrically-insulating layer, said at least one insulating layer and said active diode stack extending over the entire surface of the control circuit;
• and
• b) forming in the active stack trenches delimiting a plurality of diodes, the trenches further extending through said at least one insulating layer and emerging onto the connection surface of the control circuit;
• and
• c) forming in said trenches first metallizations connecting the second semiconductor layer of the stack to the connection surface of the control circuit.