Absorption enhancement structure for image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Chung Su, Hung-Wen Hsu, Jiech-Fun Lu, Shih-Pei Chou
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Abstract
The present disclosure, in some embodiments, relates to method of forming an integrated chip. The method may be performed by forming an image sensing element within a substrate. A dry etching process is performed on the substrate to form a plurality of intermediate protrusions defined by the substrate. A wet etching process is performed on the plurality of intermediate protrusions to form a plurality of protrusions from the plurality of intermediate protrusions.
Claims20
A method of forming an integrated chip, comprising:
- forming an image sensing element within a substrate;
- performing a dry etching process on the substrate to form a plurality of intermediate protrusions defined by the substrate;
- and
- performing a wet etching process on the plurality of intermediate protrusions to form a plurality of protrusions from the plurality of intermediate protrusions.
A method of forming an integrated chip, comprising:
- performing a dry etch on a first side of a substrate to define a plurality of intermediate protrusions having sidewalls oriented at a first angle with respect to a horizontal plane that is parallel to a second side of the substrate opposing the first side;
- and
- performing a second etch on the plurality of intermediate protrusions to reduce an angle of the sidewalls and define a plurality of protrusions.
A method of forming an integrated chip, comprising:
- forming an image sensing element within a substrate;
- performing a wet etching process to form surfaces of the substrate that define a plurality of protrusions;
- and
- wherein the surfaces of the substrate define a first one of the plurality of protrusions having a first segment, wherein an imaginary line extending along the first segment intersects an opposing sidewall of the first one of the plurality of protrusions.
Dependencies are inferred from the claim text.