Semiconductor device, method of manufacturing the same, and electronic device
AssigneeCanon Kabushiki Kaisha
InventorsHiroshi Ikakura, Takumi Ogino
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprising a first circuit component and a second circuit component, the first circuit component having a first wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a first semiconductor substrate, the second circuit component having a second wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a second semiconductor substrate, the first and second wiring structures being bonded to each other, their bonding planes being composed of oxygen atoms and carbon atoms and/or nitrogen atoms bonded to silicon atoms, and, numbers of their atoms satisfying a predetermined equation.
Claims14
A semiconductor device comprising a first circuit component and a second circuit component, wherein
- the first circuit component has a first semiconductor substrate and a first wiring structure formed by stacking one or more wiring layers and one or more insulating layers on the first semiconductor substrate,
- the second circuit component has a second semiconductor substrate and a second wiring structure formed by stacking one or more wiring layers and one or more insulating layers on the second semiconductor substrate,
- the first wiring structure and the second wiring structure of the first circuit component and the second circuit component are bonded to each other,
- the insulating layers of the first wiring structure and the second wiring structure forming a bonding plane between the first circuit component and the second circuit component are both composed of oxygen atoms and carbon atoms and/or nitrogen atoms bonded to silicon atoms, and, letting the numbers of oxygen atoms, carbon atoms, and nitrogen atoms in at least the insulating layers be NO, NC, and NN, respectively,
- 6×NO>3×NC+4×NN holds.
A method for manufacturing a semiconductor device, the method comprising:
- preparing a first circuit component having a first semiconductor substrate and a first wiring structure formed by stacking one or more wiring layers and one or more insulating layers on the first semiconductor substrate;
- preparing a second circuit component having a second semiconductor substrate and a second wiring structure formed by stacking one or more wiring layers and one or more insulating layers on the second semiconductor substrate;
- and
- bringing the first wiring structure and the second wiring structure into contact with each other to cause the first circuit component and the second circuit component to bond,
- wherein
- in each of the preparing of the first circuit component and the preparing of the second circuit component, when the insulating layers of the first wiring structure and the second wiring structure forming a bonding plane between the first circuit component and the second circuit component are both composed of oxygen atoms and carbon atoms and/or nitrogen atoms bonded to silicon atoms, and, letting the numbers of oxygen atoms, carbon atoms, and nitrogen atoms in at least the bonding plane be NO, NC, and NN, respectively,
- 6×NO>3×NC+4×NN holds.
Dependencies are inferred from the claim text.