Image sensor having p-type isolation structure
AssigneeSK hynix Inc.
InventorsSung-Kun Park, Sun-Ho Oh, Kyoung-In Lee
Life of this patent
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Abstract
An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.
Claims20
An image sensor comprising:
- a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region,
- wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.
An image sensor comprising:
- first to fourth active regions comprising first to fourth floating diffusion regions, first to fourth transistor active regions, and first to fourth isolation structures, the first to fourth floating diffusion region being electrically isolated from the first to fourth transistor active regions, respectively, by a corresponding one of the first to fourth P-type isolation structures,
- wherein one of the first to third transistor active regions comprises one of drain regions and one of source regions of a corresponding one of first to third drive transistors and one of source regions of a corresponding one of first to third select transistors, and
- the fourth transistor active region comprises a drain region and a source region of a reset transistor.
Dependencies are inferred from the claim text.