Semiconductor Image Sensor Device Having Back Side Illuminated Image Sensors with Embedded Color Filters

A device comprising:

• a substrate having a front side and a back side that is opposite the front side;
• an interconnect structure disposed over the front side of the substrate;
• a first pixel disposed in the substrate;
• a light-reflective structure disposed over the back side of the substrate;
• a color filter disposed over the back side of the substrate;
• and
• a reference pixel disposed in the substrate, wherein a first portion of the light-reflective structure is disposed directly over the reference pixel thereby preventing light from reaching the reference pixel.

A device comprising:

• a substrate having a first side and a second side that is opposite the first side;
• an interconnect structure disposed over the first side of the substrate;
• a first pixel disposed in the substrate and extending from the first side of the substrate toward the second side, wherein a portion of the substrate is disposed between the first pixel and the second side of the substrate;
• a radiation-blocking structure disposed over the second side of the substrate, wherein the radiation-blocking structure includes a first portion and a second portion and wherein the first pixel is disposed within the substrate between the first and second portions of the radiation-blocking structure;
• a shallow trench isolation structure disposed within the substrate;
• and
• a bond pad interfacing with shallow trench isolation structure such that the bond pad physically contacts the shallow trench isolation structure.